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930911 CZRA1210 MMBT4355 APHBM SS24L DM6583F SMBJ10 CXX0G
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 SLA5003
Absolute maximum ratings
Symbol VDSS VGSS ID ID(pulse) EAS* IF IFSM VR PT Ratings 200 20 5 10 (PW1ms) 60 5(PW0.5ms, Du25%) 10(PW10ms, Single pulse) 200
N-channel With built-in flywheel diode
(Ta=25C)
External dimensions A
***
SLA
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr Specification min typ max 200 500 250 2.0 4.0 1.3 2.5 0.67 0.9 260 100 50 60 1.1 1.5 700 Specification typ max 1.0 1.5 100 1.2 2.0 10 Unit V nA A V S pF pF ns ns V ns
(Ta=25C)
Unit
Conditions ID=250A, VGS=0V VGS=20V VDS=200V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 100V,VGS=10V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=100mA
j-a j-c VISO Tch Tstg
V V A A mJ A A V 5 (Ta=25C, with all circuits operating, without heatsink) W 35 (Tc=25C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25C, with all circuits operating) C/W 3.57 (Junction-Case, Tc=25C, with all circuits operating) C/W 1000 (Between fin and lead pin, AC) Vrms 150 C -40 to +150 C
qDiode for flyback voltage absorption (1 circuit)
Symbol VR min 200 Unit V V V A ns Conditions IR=10A IF=1A IF=5A VR=200V IF=100mA
* : VDD=20V, L=10mH, ID=3.5A, unclamped, see Fig. E on page 15.
sEquivalent circuit diagram
2 3 4 9 10 11
VF IR
1
5
8
12
trr
6
7
Characteristic curves
ID-VDS Characteristics (Typical)
8
10V
ID-VGS Characteristics (Typical)
8
RDS(ON)-ID Characteristics (Typical)
1.5
(VDS=10V)
(VGS=10V)
6
7V
6
1.0
ID (A)
ID (A)
TC=-40C
RDS
6V
(ON)
4
4
()
0.5
2
VGS=5V
2
25C 125C
0 0 5 10 15 20
0 0 2 4 6 8 10
0 0 1 2 3 4 5 6 7 8
VDS (V)
VGS (V)
ID (A)
Re(yfs)-ID Characteristics (Typical)
5
RDS(ON)-TC Characteristics (Typical)
2.5
Capacitance-VDS Characteristics (Typical)
1000 500
(VDS=10V)
ID=5A VGS=10V
VGS=0V f=1MHz
TC=-40C 25C
2.0
Ciss
Re (yfs) (S)
125C
1.5
Capacitance (pF)
()
(ON)
100 50
1
Coss
RDS
0.5
1.0
0.5
10
0.2 0.05
Crss
0.1
0.5
1
5
10
0 -40
5
0
50
100
150
0
10
20
30
40
50
ID (A)
TC (C)
VDS (V)
IDR-VSD Characteristics (Typical)
8
20
Safe Operating Area (SOA)
(TC=25C)
ID (pulse) max
PT-Ta Characteristics
40 35 30 25 20 15
W
10 5
(O N)
10
TE D
0 s
With Silicone Grease Natural Cooling All Circuits Operating
6
RD LIMI
S
1m
10 ms (1s
s
ith
IDR (A)
ID (A)
1 0.5
ho
t)
PT (W)
In fin ite
4
He at sin k
2
10V 5V VGS=0V
10
0.1
5
0.05 0.03
Without Heatsink
0
0
3 5 10 50 100 200
0
0.5
1.0
1.5
0
50
100
150
VSD (V)
VDS (V)
Ta (C)
36


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